Analysis of Innovative Technologies in Image Sensors

Innovative Technologies in Image Sensors:

Quantum Dot dot image sensors replace the silicon photosensitive layer with a quantum dot transparent film, offering unique photoelectric characteristics. The quantum confinement effect enhances the behavior of electrons holes, providing a tunable bandgap that facilitates efficient conversion of light signals into electrical signals. This technology boasts a wider spectral response and excellent dynamic range, showing promise in consumer electronics and automotive industries.

Pixel enhancement and size optimization: As consumers demand higher image quality, CMOS image sensor are striving for higher pixel counts and larger sensor sizes to capture more light, improve image clarity, and increase dynamic range. Some high-end smartphones, for instance, sensors that are 1 inch or even larger.

Backside illumination and stacked structures: Backside illumination places the photodiode on the upper layer of the siliconfer, allowing direct light exposure and improving light utilization efficiency and sensitivity. Stacked structures further move the circuitry to the bottom layer of the photosensitive elements, the overall chip area and optimizing circuit noise suppression, resulting in higher image quality and faster processing speeds, commonly seen in smartphones and other devices.

Dynamic range and low performance improvements: Manufacturers are developing new HDR technologies, such as multi-frame compositing and high/low conversion gain circuits. They are also optimizing pixel structures enhancing photoelectric conversion efficiency, and adopting advanced signal processing techniques to significantly improve the performance of CMOS image sensors in low light conditions.

High-speed reading and global technology: To meet the demands of video recording and high-speed motion capture, stacked structures and global shutter technology are being utilized. Global shutter technology allows simultaneous exposure of pixels in the sensor array, preventing distortion and deformation caused by rolling shutters, and is widely used in high-speed photography and industrial inspection.

Intelligence and integration: Some CMOS image sensors are beginning to integrate AI processing units, enabling real-time image content analysis, optimized shooting parameters, and a smarter photography experience. This enhances efficiency and effectiveness of image processing.

This technology mimics the workings of biological vision to overcome limitations of traditional frame-scanning sampling modes. By researching and establishing a comprehensive system model that includes photoelectric conversion, pixel structure, and signal readout, the pixel devices and circuits have been designed and developed. This technology enables high-speed target tracking based on temporal visual information and has excellent dynamic range and event rate performance providing theoretical guidance and technical sources for the design and application of next-generation visual sensors.

Developed collaboration among multiple units, this technology uses cesium lead bromide perovskite quantum dots as the photosensitive layer and charge trapping layer, and semiconing carbon nanotube films as the charge transport layer. The resulting sensor integrates light sensing, information storage, and data preprocessing functions, allowing real-time parallel information. It is significant for artificial visual systems that mimic biological visual processing and has been demonstrated to respond and complete neuromorphic reinforcement learning in extremely dark conditions.